Advantage of the use of an added driver source lead in discrete Power MOSFETs
Vishay claims best FOM for 600V superjunction mosfet
Commercialization of new TO-247-4L packaging 600-V Super Junction Power MOSFET (DTMOSIV-H Series) | Toshiba Electronic Devices & Storage Corporation | Americas – United States
Optimal design of kelvin source SiC MOSFET based PFC considering inductor parasitic capacitance and source mutual inductance - ScienceDirect
Using Kelvin connections to enhance switching efficiency in SiC FETs - Qorvo
600V CoolMOS™ G7 - Infineon Technologies
SiC Optimized Packaging – The Advantage of the Kelvin Source Pin - YouTube
Kelvin Connection - an overview | ScienceDirect Topics
Significant Improvement of Switching Characteristics in a 1.2‐kV SiC SWITCH‐MOS by the Application of Kelvin Source Connection - Matsui - 2023 - IEEJ Transactions on Electrical and Electronic Engineering - Wiley Online Library
Single layer Inductor 3.1.2 Quasi-Kelvin-Source connection to reduce L... | Download Scientific Diagram
Real-Time Junction Temperature-Monitoring Circuit and the Factors Affecting It for SiC MOSFETs - Power Electronics News
Automotive SiC MOSFETs in LowInductive SMD Package with Kelvin Source - Technical Articles
SiC MOSFETs Adopting 4-pin Packages:SCT3xxx xR Series : Reasons for Adopting 4-pin Package | TechWeb
How a Driver Source Pin Improves Switching Efficiency - Industry Articles
Figure 1 from Impact of Kelvin-Source Resistors on Current Sharing and Failure Detection in Multichip Power Modules | Semantic Scholar
gate driving - Maximum Vgs for MOSFETs with kelvin source - Electrical Engineering Stack Exchange
Electronics: Do I connect grounds on a 4-pin MOSFET with kelvin source? - YouTube